BZX884S-C18

Marking：4E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-C18-Q

Marking：4E；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

IAUZN04S7N049

Marking：4E；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features •OptiMOSTMpowerMOSFETforautomotiveapplications •N-channel–Enhancementmode–NormalLevel •ExtendedqualificationbeyondAEC-Q101 •Enhancedelectricaltesting •Robustdesign •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •RoHScompliant •100%Avala

MM1Z3V0

Marking：4E；Silicon Planar Zener Diodes

FEATURES •Totalpowerdissipation:Max.500mW. •Widezenerreversevoltagerange2.0Vto75V. •Smallplasticpackagesuitableforsurfacemounteddesign. •Toleranceapproximately±5

MMBT3904TB_R1_00001

Marking：4E；Package：SOT-523；NPN General Purpose Switching Transistor

Features SiliconNPNplanardesign Collector-EmitterVoltageVCE=40V CollectorCurrentIC=200mA LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249Standard

PESD3V3L1BBSF

Marking：4E；Package：SOD962-2；Very low clamping bidirectional ESD protection diode

1.Generaldescription VerylowclampingbidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotect onesignallinefromthedamagecausedbyESDandothertransients.Thedeviceishousedina leadlessultrasmallDSN0603-2(SOD962)Surface-MountedDevice(SMD)package.

PIMN31

Marking：4E；Package：SOT457；500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW

1.1Generaldescription 500mA,50VNPN/NPNdoubleResistor-EquippedTransistor(RET)inasmall SOT457(SC-74)Surface-MountedDevice(SMD)plasticpackage. 1.2Features n500mAoutputcurrentcapability nBuilt-inbiasresistors nSimplifiescircuitdesign nReducescomponentcount nR

PMEG4010ESB

Marking：4E；Package：DSN1006-2；40 V, 1 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotectioninaleadlessultrasmallDSN1006-2(SOD993) Surface-MountedDevice(SMD)package. 2.Featuresandbenefits •Averageforwardcurrent:I

PMPB10XNEA

Marking：4E；Package：SOT1220；20 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessmediumpower DFN2020MD-6(SOT1220)Surface-MountedDevice(SMD)plasticpackageusingTrench MOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •TrenchMOSFETtechnology •Sidewe

PMV52ENE

Marking：4E；Package：SOT23；30 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inasmallSOT23Surface-Mounted Device(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Logic-levelcompatible •ExtendedtemperaturerangeTj=175°C •TrenchMOSFETtechnology