丝印：4E；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

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丝印：4E；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

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丝印：4E；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：2.92894 Mbytes 页数：12 Pages

Infineon

英飞凌

丝印：4E；Silicon Planar Zener Diodes

FEATURES • Total power dissipation: Max. 500mW. • Wide zener reverse voltage range 2.0V to 75V. • Small plastic package suitable for surface mounted design. • Tolerance approximately±5

文件：776.59 Kbytes 页数：2 Pages

JUXING

广东钜兴电子

丝印：4E；Package：SOT-523；NPN General Purpose Switching Transistor

Features  Silicon NPN planar design  Collector-Emitter Voltage VCE = 40V  Collector Current IC = 200mA  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 Standard

文件：399.91 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：4E；Package：SOD962-2；Very low clamping bidirectional ESD protection diode

1. General description Very low clamping bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a leadless ultra small DSN0603-2 (SOD962) Surface-Mounted Device (SMD) package.

文件：221.09 Kbytes 页数：11 Pages

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丝印：4E；Package：SOT457；500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW

1.1 General description 500 mA, 50 V NPN/NPN double Resistor-Equipped Transistor (RET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. 1.2 Features n 500 mA output current capability n Built-in bias resistors n Simplifies circuit design n Reduces component count n R

文件：209.19 Kbytes 页数：12 Pages

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丝印：4E；Package：DSN1006-2；40 V, 1 A low VF MEGA Schottky barrier rectifier

1. General description Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection in a leadless ultra small DSN1006-2 (SOD993) Surface-Mounted Device (SMD) package. 2. Features and benefits • Average forward current: I

文件：697.6 Kbytes 页数：14 Pages

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丝印：4E；Package：SOT1220；20 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Trench MOSFET technology • Side we

文件：299.07 Kbytes 页数：14 Pages

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丝印：4E；Package：SOT23；30 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Extended temperature range Tj = 175 °C • Trench MOSFET technology

文件：268.5 Kbytes 页数：15 Pages

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