BC859W

PNP general purpose transistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC859W

PNP Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC859W

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC859W

PNP General Purpose Transistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

BC859W

PNP Silicon Epitaxial Planar Transistor

PNPSiliconEpitaxialPlanarTransistor forgeneralpurposeandswitchingapplications

BC859W

PNP GENERAL PURPOSE TRANSISTORS

VOLTAGE30/45/65VoltsCURRENT200mWatts FEATURES •Generalpurposeamplifierapplications •PNPepitaxialsilicon,planardesign •CollectorcurrentIC=100mA •Complimentary(NPN)Devices:BC846W/BC847W/BC848W/BC849WSeries •IncompliancewithEURoHS2002/95/ECdirectives

BC859W

Marking：4D；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC859W

PNP Transistors

BC859W

Surface Mount General Purpose Si-Epi-Planar Transistors

BC859W_15

PNP Transistors