丝印：4B；Package：PG-TSDSON-8-44；OptiMOSTM 7 Power-Transistor

Features • OptiMOSTM power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avala

文件：2.93933 Mbytes 页数：12 Pages

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英飞凌

40 V、N 通道、2 mΩ、汽车功率 MOSFET、S3O8 (3x3)、OptiMOS ™ 7

The IAUZN04S7N020 is a high-current, low-RDS(on) power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional lea • 3x3 mm² small footprint\n• 60 A high current capability\n• Available in leading-edge OptiMOS-7™ 40V technology\n• RDS(on) range: 1.2 mΩ – 4.9 mΩ\n• Advanced leadless package for low Ron and inductance\n• High avalanche capability and SOA ruggedness\n\n优势:\n• Highest power and current density \n• H;

Infineon

英飞凌

OptiMOS™ 7 Power-Transistor

Features • OptiMOS™ power MOSFET for automotive applications • N-channel – Enhancement mode – Normal Level • Extended qualification beyond AEC-Q101 • Enhanced electrical testing • Robust design • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100 Avalanche t

文件：747.48 Kbytes 页数：12 Pages

Infineon

英飞凌