IAUZN04S7N020数据手册Infineon中文资料规格书

描述 Description

The IAUZN04S7N020 is a high-current, low-RDS(on) power MOSFET in a 3x3mm² advanced leadless package with Cu-Clip for low package Ron and min. stray inductance, offering high power density, low conduction losses, and optimized switching behavior, with a reduced form factor compared to traditional leaded packages, ideal for automotive applications such as power distribution, body control modules, and electric motors.

特性 Features

• 3x3 mm² small footprint
• 60 A high current capability
• Available in leading-edge OptiMOS-7™ 40V technology
• RDS(on) range: 1.2 mΩ – 4.9 mΩ
• Advanced leadless package for low Ron and inductance
• High avalanche capability and SOA ruggedness

优势:
• Highest power and current density 
• High thermal capacity lead-frame package 
• Reduced conduction losses 
• Optimized switching behavior 
• Reduced form factor vs traditional packages
• JEDEC Industry standard package PG-TSDSON-8