BC859B

PNP general purpose transistors

DESCRIPTION PNPtransistorinaSOT23plasticpackage. NPNcomplements:BC849andBC850. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoiseinputstagesofaudiofrequencyequipment.

BC859B

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC846,BC847, BC849,BC850(NPN)

BC859B

Switching and Amplifier Applications

Features •SwitchingandAmplifierApplications •Suitableforautomaticinsertioninthickandthin-filmcircuits •LowNoise:BC859,BC860 •ComplementtoBC846...BC850

BC859B

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation250mW •PlasticcaseSOT-23 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagin

BC859B

Marking：4BS；Package：SOT-23；PNP Silicon AF Transistors

PNPSiliconAFTransistors •ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846,BC847,BC848,BC849,BC850(NPN)

BC859B

General Purpose Transistor PNP Silicon

GeneralPurposeTransistor PNPSilicon P/bLead(Pb)-Free

BC859B

PNP General Purpose Transistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●NPNcomplements:BC849andBC850.

BC859B

General Purpose Transistors

GeneralPurposeTransistors PNPSilicon •MoistureSensitivityLevel:1 •ESDRating –HumanBodyModel:>4000V –MachineModel:>400V •Wedeclarethatthematerialofproductcompliancewith RoHSrequirements.

BC859B

Marking：4B；Package：SOT23；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC859B

SMD General Purpose PNP Transistors