BC859BW

PNP general purpose transistors

DESCRIPTION PNPtransistorinaSOT323plasticpackage. NPNcomplements:BC849WandBC850W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

BC859BW

PNP Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes:BC846W,BC847W,BC848W,BC849W,BC850W(NPN)

BC859BW

Surface mount Si-Epitaxial PlanarTransistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC859BW

PNP General Purpose Transistor

■Features ●Lowcurrent(max.100mA) ●Lowvoltage(max.45V). ●ComplementstoBC849WandBC850W.

BC859BW

PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

Features ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC847W,BC848W,BC849W,BC850W(NPN)

BC859BW

SMD General Purpose PNP Transistors

SurfacemountSi-EpitaxialPlanarTransistors •Powerdissipation200mW •PlasticcaseSOT-323 •Weightapprox.0.01g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled

BC859BW

Marking：4B；Package：SOT323；PNP general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC859BW

Surface Mount General Purpose Si-Epi-Planar Transistors

BC859BW,115

Package：SC-70，SOT-323；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.1A SOT323

Nexperia USA Inc.

BC859BW,135

Package：SC-70，SOT-323；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 30V 0.1A SOT323

Nexperia USA Inc.