丝印：36N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.86 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：36N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：493.73 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：36N120；Package：TO-247-3；N-Channel SiC Power MOSFET

Features ⚫ High Blocking Voltage with LowOn-Resistance ⚫ High Speed Switching with Low Capacitance ⚫ Easy to connect in parallel and to Drive Benefits ⚫ Higher System Efficiency ⚫ Reduced Cooling Requirements ⚫ Increased Power Density ⚫ Increased System Switching Frequency

文件：1.53221 Mbytes 页数：7 Pages

RECTRON

丽正国际

丝印：36N60M6；Package：D2PAK；N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

文件：1.00066 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

Features • Designed for automotive applications and AEC-Q101 qualified • 100 avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second gene

文件：1.04479 Mbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa

文件：1.36347 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：36N60DM6；Package：H2PAK-7；Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6 Power MOSFET in an H²PAK-7 package

Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in

文件：469.88 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247

Features ■ 100 avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications – Automotive Description This device is made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new ve

文件：869.77 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performa

文件：1.36347 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：36N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V

文件：1.35356 Mbytes 页数：11 Pages

Infineon

英飞凌