丝印：36N120；Package：TO-247-3；N-Channel SiC Power MOSFET

Features ⚫ High Blocking Voltage with LowOn-Resistance ⚫ High Speed Switching with Low Capacitance ⚫ Easy to connect in parallel and to Drive Benefits ⚫ Higher System Efficiency ⚫ Reduced Cooling Requirements ⚫ Increased Power Density ⚫ Increased System Switching Frequency

文件：1.53221 Mbytes 页数：7 Pages

RECTRON