744760136A

Marking：36N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

744760136GA

Marking：36N；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

RSM36N120T7

Marking：36N120；Package：TO-247-3；N-Channel SiC Power MOSFET

Features ⚫HighBlockingVoltagewithLowOn-Resistance ⚫HighSpeedSwitchingwithLowCapacitance ⚫EasytoconnectinparallelandtoDrive Benefits ⚫HigherSystemEfficiency ⚫ReducedCoolingRequirements ⚫IncreasedPowerDensity ⚫IncreasedSystemSwitchingFrequency

STB36N60M6

Marking：36N60M6；Package：D2PAK；N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a D²PAK package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STB36NM60N

Marking：36NM60N；Package：D2PAK；Automotive-grade N-channel 600 V, 0.093 Ω, 29 A, MDmesh™ II Power MOSFET in a D²PAK package

Features •Designedforautomotiveapplicationsand AEC-Q101qualified •100avalanchetested •Lowinputcapacitanceandgatecharge •Lowgateinputresistance Applications •Switchingapplications Description ThisdeviceisanN-channelPowerMOSFET developedusingthesecondgene

STB36NM60ND

Marking：36NM60ND；Package：D2PAK；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

STH36N60DM6-7AG

Marking：36N60DM6；Package：H2PAK-7；Automotive-grade N-channel 600 V, 0.084 Ω typ., 29 A MDmesh™ DM6 Power MOSFET in an H²PAK-7 package

Applications •Switchingapplications Description Thishigh-voltageN-channelPowerMOSFETispartoftheMDmesh™DM6fastrecovery diodeseries.ComparedwiththepreviousMDmeshfastgeneration,DM6 combinesverylowrecoverycharge(Qrr),recoverytime(trr)andexcellent improvementin

STW36NM60N

Marking：36NM60N；Package：TO-247；N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247

Features ■100avalanchetested ■Lowinputcapacitanceandgatecharge ■Lowgateinputresistance Application ■Switchingapplications –Automotive Description Thisdeviceismadeusingthesecondgeneration ofMDmesh™technology.Thisrevolutionary PowerMOSFETassociatesanewve

STW36NM60ND

Marking：36NM60ND；Package：TO-247；Automotive-grade N-channel 600 V, 0.097 typ., 29 A FDmesh II

Description TheseFDmesh™IIPowerMOSFETswith intrinsicfast-recoverybodydiodeareproduced usingthesecondgenerationofMDmesh™ technology.Utilizinganewstrip-layoutvertical structure,theserevolutionarydevicesfeature extremelylowon-resistanceandsuperior switchingperforma

ISC036N04NM5

Marking：36N04NM5；Package：TDSON-8FL；OptiMOSTM 5 Power-Transistor, 40 V