Silicon N Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd= 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：78.47 Kbytes 页数：7 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

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瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency PG = 17 dB, Pout = 6.31 W, ηadd = 60 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：180.61 Kbytes 页数：12 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency     PG = 18 dB, Pout = 1.6 W, ηadd = 58 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：62.73 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N-Channel MOS FET UHF Power Amplifier

Features • High power output, High gain, High efficiency     PG = 18 dB, Pout = 1.6 W, ηadd = 58 min. (f = 836 MHz) • Compact package capable of surface mounting

文件：62.73 Kbytes 页数：5 Pages

RENESAS

瑞萨

Silicon N-Channel Junction FET

Silicon N-Channel Junction FET For impedance conversion in low frequency For infrared sensor ■ Features • Low gate-source cutoff current IGSS • Small capacitance of short-circuit forward transfer capacitance (common source) Ciss , short-circuit output capacitance (common source) Coss , revers

文件：72.17 Kbytes 页数：3 Pages

Panasonic

松下

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)

Relay Drive and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.5 to 3.0 V (VDS = 10 V,

文件：96.57 Kbytes 页数：3 Pages

TOSHIBA

东芝

Switching Regulator and DC-DC Converter Applications

Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS

文件：217.72 Kbytes 页数：6 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

SWITCHING REGULATOR APPLICATIONS

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON)= 0.54 Ω(typ.) • High forward transfer admittance: |Yfs| = 5.2 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 3.0 to 5.0 V (VDS= 10 V, ID= 1 mA)

文件：497.76 Kbytes 页数：6 Pages

TOSHIBA

东芝