Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • High speed switching • 2.5 V gate drive device. Application High speed power switching

文件：44.87 Kbytes 页数：9 Pages

HitachiHitachi Semiconductor

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Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Application Low frequency power switching

文件：40.57 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

文件：110.53 Kbytes 页数：7 Pages

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瑞萨

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

文件：110.53 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK).

文件：110.53 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance. • Low drive power • 2.5 V gate drive device. • Small package (MPAK). Application Low frequency power switching

文件：40.34 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

日立日立公司

General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Low ON-state resistance. • High-speed switching. • Surface mount type device making the following possible. • Reduction in the number of manufacturing processes for 2SJ455-applied equipment. • High density surface mount applica

文件：185.08 Kbytes 页数：3 Pages

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Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • High-speed diode incorporated. • Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface mountable package.

文件：29.06 Kbytes 页数：4 Pages

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P CHANNEL MOS SILICON TRANSISTOR

P CHANNEL MOS SILICON TRANSISTOR

文件：13.24 Kbytes 页数：1 Pages

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Ultrahigh-Speed Switching Applications

Ultrahigh-Speed Switching Applications Features • High-speed diode incorporated.

文件：32.119 Kbytes 页数：4 Pages

SANYO

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