SILICON POWER TRANSISTOR

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current

文件：244.63 Kbytes 页数：8 Pages

RENESAS

瑞萨

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min.) • Wide Area of Safe Operation • Complement to Type 2SB1477 APPLICATIONS • Designed for driver and general purpose applications.

文件：246.95 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE = 2000(Min)@ IC= 2A • Low Collector Saturation Voltage- : VCE(sat) = 2.0V(Max.) @IC= 5A • Complement to Type 2SB1478 APPLICATIONS • Designed for power linear and switching applications.

文件：241.45 Kbytes 页数：2 Pages

ISC

无锡固电

TRANSISTORS

TO-220 class high output power package with Pc 60 to 100W.

文件：69.12 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)

Silicon PNP epitaxial planar type For high breakdown voltage low-frequency amplification Complementary to 2SD2240 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through t

文件：36.48 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：37 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type

For high breakdown voltage low-frequency and low-noise amplification ■Features ● High collector to emitter voltage VCEO. ● Low noise voltage NV. ● SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.

文件：37 Kbytes 页数：2 Pages

PANASONIC

松下

NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS)

Switching Applications • High DC current gain: hFE = 2000 (min) • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1481

文件：160.35 Kbytes 页数：3 Pages

TOSHIBA

东芝

Silicon NPN Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain : hFE=2000 (Min) • Low saturation voltage • Complement to type 2SB1481 • DARLINGTON APPLICATIONS • With switching applications

文件：220.66 Kbytes 页数：5 Pages

ISC

无锡固电