Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：271.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：271.15 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 0.3A APPLICATIONS ·DC-DC converter,relay drivers,lamp drivers,motor drivers, inverter

文件：252.1 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type(Silicon NPN triple diffusion planar type)

Silicon NPN triple diffusion planar type For power amplification ■ Features ● High collector to base voltage VCBO ● I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.

文件：49.44 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon NPN epitaxial planer type

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462 ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

文件：36.87 Kbytes 页数：2 Pages

PANASONIC

松下

SILICON NPN EPITAXIAL PLANAR TYPE

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462J ■ Features • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat) • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape

文件：85.8 Kbytes 页数：3 Pages

PANASONIC

松下

For General Amplification

Silicon NPN epitaxial planar type For general amplification Complementary to 2SB1462L ■ Features • High forward current transfer ratio hFE • Mold lead-less type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing.

文件：39.89 Kbytes 页数：2 Pages

PANASONIC

松下

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for low-frequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drivers

文件：100.19 Kbytes 页数：4 Pages

NEC

瑞萨

DARLINGTON POWER TRANSISTOR

NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2217 is a mold power transistor developed for lowfrequency power amplifiers and low-speed switching. This transistor is ideal for direct driving from the IC out to drive

文件：253.98 Kbytes 页数：6 Pages

RENESAS

瑞萨

General High-Current Switching Applications

General High-Current Switching Applications Features • Micaless package facilitating mounting. • Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4V (NPN) max. • Large current capacity. Applications • Relay drivers, high-speed inverters, converters.

文件：110.24 Kbytes 页数：3 Pages

SANYO

三洋