丝印：2SD2211；Package：SOT-89；NPN Silicon Epitaxial Planar Transistor

文件：478.39 Kbytes 页数：3 Pages

PJSEMI

平晶半导体

80V/5A Switching Applications

80V/5A Switching Applications Features • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1451/2SD2200-applied equipment. -High density surface mount applications. -Small size of 2SB1451/2SD2200-applied equipme

文件：133.93 Kbytes 页数：4 Pages

SANYO

三洋

Switching Applications

Features ● Surface mount type device making the following possible. ● Low collector-to-emitter saturation voltage. ● Large current capacity.

文件：45.11 Kbytes 页数：2 Pages

KEXIN

科信电子

80V/7A Switching Applications

80V/7A Switching Applications Features · Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment. -High density surface mount applications. -Small size of 2SB1452/2SD2201-applied equipment.

文件：132.13 Kbytes 页数：4 Pages

SANYO

三洋

High-Current Switching Applications

Features • Low collector-to-emitter saturation voltage. • Large current capacity. • Micaless package facilitating easy mounting.

文件：131.97 Kbytes 页数：4 Pages

SANYO

三洋

High-Current Switching Applications

Features · Low collector-to-emitter saturation voltage. · Large current capacity. · Micaless package facilitating easy mounting.

文件：129.09 Kbytes 页数：4 Pages

SANYO

三洋

NPN TRIPLE DIFFUSED TYPE (HIGH POWER SWITHCING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 1.5 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1.5 A)

文件：204.95 Kbytes 页数：4 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (MICRO MOTOR DRIVE, HAMMER DRIVE, SWITCHING, POWER AMPLIFIER APPLICATIONS)

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：160.42 Kbytes 页数：3 Pages

TOSHIBA

东芝

Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：141.5 Kbytes 页数：4 Pages

TOSHIBA

东芝

Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：141.5 Kbytes 页数：4 Pages

TOSHIBA

东芝