2SD2206A

Micro Motor Drive, Hammer Drive Applications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

2SD2206A(T6SEP,F,M

包装：散装 封装/外壳：TO-226-3，TO-92-3 长体 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 2A TO92MOD

Toshiba Semiconductor and Storage

2SD2206

NPNEPITAXIALTYPE(MICROMOTORDRIVE,HAMMERDRIVE,SWITCHING,POWERAMPLIFIERAPPLICATIONS)

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)

2SD2206

SiliconNPNEpitaxialType(DarlingtonPowerTransistor)

2SD2206

MicroMotorDrive,HammerDriveApplications

2SD2206

MicroMotorDrive,HammerDriveApplications

MicroMotorDrive,HammerDriveApplications SwitchingApplications PowerAmplifierApplications •HighDCcurrentgain:hFE=2000(min)(VCE=2V,IC=1A) •Lowsaturationvoltage:VCE(sat)=1.5V(max)(IC=1A,IB=1mA)