Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：141.5 Kbytes 页数：4 Pages

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Package：TO-226-3，TO-92-3 长体；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 120V 2A TO92MOD

Toshiba Semiconductor and Storage

Micro Motor Drive, Hammer Drive Applications

Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)

文件：141.5 Kbytes 页数：4 Pages

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Micro Motor Drive, Hammer Drive Applications

文件：141.5 Kbytes 页数：4 Pages

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Silicon NPN Epitaxial Type (Darlington Power Transistor)

文件：119.18 Kbytes 页数：4 Pages

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