NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1= 33 mV TYP. @IC= 100 mA, IB= 10 mA VCE(sat)2= 150 mV TYP. @IC= 500 mA, IB= 20 mA • High hFEand high current

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NEC

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SILICON POWER TRANSISTOR

The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs, and TVs. FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP. @IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP. @IC = 500 mA, IB = 20 mA • High hFE and high current

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RENESAS

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NPN Silicon Epitaxia

Features ● High hFE and high current. ● Low VCE(sat).

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KEXIN

科信电子

Transistor

Renesas

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