Low Frequency Transistor (20V,3A)

Features 1) Low VCE(sat). VCE(sat)= 0.2V (Typ.) (IC/IB= 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S.

文件：99.21 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon NPN triple diffusion planar type(For power switching)

For power switching ■Features ● High-speed switching ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing supply with the radial taping

文件：53.36 Kbytes 页数：3 Pages

PANASONIC

松下

Medium Power Amplifiers and Switches

Medium Power Amplifiers and Switches TO-92 Plastic-Encapsulate Transistors

文件：41.27 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1500 ■ Features ● Optimum for 40W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：56.84 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.34 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) • High DC Current Gain- : hFE= 5000( Min.) @(IC= 4A, VCE= 5V) • Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) B • Complement to Type 2SB1502 APPLICATIONS • Designed for power amplification.

文件：251.47 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type Darlington(For power amplification)

Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1502 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：57.07 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B ·Complement to Type 2SB1503 APPLICATIONS ·Designe

文件：251.5 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1503 ■ Features • Optimum for 110 W Hi-Fi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

文件：57.19 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.96 Kbytes 页数：3 Pages

PANASONIC

松下