Silicon NPN triple diffusion planar type Darlington(For power amplification)

For power amplification Complementary to 2SB1503 ■ Features • Optimum for 110 W Hi-Fi output • High forward current transfer ratio hFE • Low collector-emitter saturation voltage VCE(sat)

文件：57.19 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.96 Kbytes 页数：3 Pages

PANASONIC

松下

isc Silicon NPN Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·High DC Current Gain- : hFE= 5000( Min.) @(IC= 7A, VCE= 5V) ·Low Collector Saturation Voltage- : VCE(sat)= 2.5V(Max)@ (IC= 7A, IB= 7mA) B ·Complement to Type 2SB1503 APPLICATIONS ·Designe

文件：251.5 Kbytes 页数：2 Pages

ISC

无锡固电

SOT89

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT89

RENESAS

瑞萨

上传：深圳市正纳电子有限公司