Bipolar Transistor 15V, 0.7A, Low VCE(sat), NPN Single PCP

Features • Low collector-to-emitter saturation voltage • Very small size making it easy to provide highdensity, small-sized hybrid IC’s

文件：272.95 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

LF Amp,Electronic Governor Applications

LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s.

文件：85.62 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications.

文件：260.779 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor

Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.

文件：51.73 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

文件：140.93 Kbytes 页数：3 Pages

SECOS

喜可士

NPN Epitaxial Planar Silicon Transistor

Features ● Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. ● Large current capacity and highly resistant to breakdown. ● Excellent linearity of hFE in the region from low current to high current. ● Ultrasmall size supports high-density, u

文件：50.63 Kbytes 页数：1 Pages

KEXIN

科信电子

1.5V,3V Strobe Applications

1.5V, 3V Strobe Applications Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted. • Large current capacity and highly resistant to breakdown. • Excellent linearity of hFE in the region from low current to high current. • Ultrasmall

文件：75.83 Kbytes 页数：3 Pages

SANYO

三洋

Bipolar Transistor

Features • Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted • Large current capacity and highly resistant to breakdown • Excellent linearity of hFE in the region from low current to high current • Ultrasmall size supports high-density,

文件：290.25 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

High-Current Driver Applications?

Features ¥ Adoption of FBET, MBIT processes. ¥ Low collector-to-emitter saturation voltage. ¥ Large current capacity and wide ASO. ¥ Fast switching speed. ¥ Ultrasmall size making it easy to provide high-density, small-sized hybrid ICÕs. Applications ¥ Voltage regulators, relay drivers, lam

文件：95.99 Kbytes 页数：3 Pages

SANYO

三洋

Low-Frequency Power Amp Applications?

Low-Frequency Power Amplifier Applications Features • Adoption of FBET process. • Very small size making it easy to provide highdensity hybrid IC’s. Applications • Voltage regulators relay drivers, lamp drivers, electrical equipment.

文件：117.48 Kbytes 页数：4 Pages

SANYO

三洋