SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

文件：235.8 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

文件：1.28825 Mbytes 页数：5 Pages

WEITRON

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURE Power dissipation

文件：149.41 Kbytes 页数：2 Pages

DAYA

大亚电器

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for audio frequency power amplifier and medium-speed switching applications.

文件：232.41 Kbytes 页数：1 Pages

DCCOM

道全

SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURES ● Low collector saturation voltage ● High break down voltage ● High total power dissipation

文件：1.047099 Mbytes 页数：3 Pages

JIANGSU

长电科技

NPN SILICON TRANSISTOR

DESCRIPTION 2SD1616A is NPN silicon planar transistor designed for use in driver and output stages of AF amplifier, general purpose application.

文件：111.43 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

NPN Plastic-Encapsulated Transistor

FEATURES • Power dissipation

文件：346.75 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

文件：1.75193 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 120 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：148.22 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation

文件：294.41 Kbytes 页数：2 Pages

KOOCHIN

灏展电子