NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

文件：49.75 Kbytes 页数：4 Pages

NEC

瑞萨

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

文件：156.68 Kbytes 页数：2 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

文件：145.22 Kbytes 页数：3 Pages

UTC

友顺

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • Low VCE(sat): VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A • Complementary transistor with t

文件：235.8 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Transistors

NPN Transistors P/b Lead(Pb)-Free

文件：1.28825 Mbytes 页数：5 Pages

WEITRON

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Low VCE(sat) ● Complementary Transistor with The 2SB1116

文件：418.01 Kbytes 页数：3 Pages

JIANGSU

长电科技

NPN Silicon Transistor

NPN Silicon Transistor The 2SD1616 / 2SD1616A are designed for use in driver and output stages of AF amplifier general purpose application. The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be manufactured i

文件：157.46 Kbytes 页数：2 Pages

SEMTECH_ELEC

先之科半导体

丝印：D1616；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

文件：1.44388 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.75 W (Tamb=25℃) Collector current ICM: 1 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：148.33 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

丝印：1616A；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low collector saturation voltage High break down voltage High total power dissipation

文件：1.93904 Mbytes 页数：4 Pages

DGNJDZ

南晶电子