NPN SILICON EPITAXIAL TRANSISTORS POWER MINI MOLD

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 2SD1115A

文件：49.75 Kbytes 页数：4 Pages

NEC

瑞萨

Old Company Name in Catalogs and Other Documents

DESCRIPTION 2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES • Low VCE (sat) VCE(sat) = 0.15 V • Complement to 2SB1115, 1115A

文件：210.12 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Silicon Epitaxial Transistor

Features ● World Standard Miniature Package. ● Low VCE(sat) VCE(sat) = 0.15 V

文件：52.17 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN Transistors

文件：1.25752 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.25752 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.25752 Mbytes 页数：3 Pages

KEXIN

科信电子

Small Signal Bipolar Transistors

Support is limited to customers who have already adopted these products.\n\n2SD1615, 1615A are designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. • Low VCE (sat) VCE(sat) = 0.15 V\n• Complement to 2SB1115, 1115A;

Renesas

瑞萨