丝印：D1616；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

文件：1.44388 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D1616；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES Low VCE(sat) Complementary Transistor with The 2SB1116

文件：1.44388 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

文件：1.75193 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

丝印：D1616A；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEA TURE Power dissipation

文件：1.75193 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

NPN SILICON TRANSISTORS

DESCRIPTION The 2SD1616/2SD1616A are designed for use in driver and output stages of AF amplifier, general purpose application.

文件：156.68 Kbytes 页数：2 Pages

NEC

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR DESCRIPTION * Audio frequency power amplifier * Medium speed switching

文件：145.22 Kbytes 页数：3 Pages

UTC

友顺

NPN EPITAXIAL SILICON TRANSISTOR

文件：66.6 Kbytes 页数：4 Pages

UTC

友顺

NPN EPITAXIAL SILICON TRANSISTOR

文件：184.47 Kbytes 页数：4 Pages

UTC

友顺