2SD1616A中文资料瑞萨数据手册PDF规格书

NPN SILICON EPITAXIAL TRANSISTOR

FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

FEATURES

• Low VCE(sat):

VCE(sat) = 0.15 V TYP. (IC = 1.0 A, IB = 50 mA)

• Large PT in small dimension with versatility

PT = 0.75 W, VCEO = 50/60 V, IC(DC) = 1.0 A

• Complementary transistor with the 2SB1116 and 1116A