LF Amp,Electronic Governor Applications

LF Amplifier, Electronic Governor Applications Features · Very small size making it easy to provide high density, small-sized hybrid IC’s.

文件：85.62 Kbytes 页数：3 Pages

SANYO

三洋

isc Silicon NPN Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= 25V (Min) • Complement to Type 2SB1119 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for LF Amp Electronic Governor applications.

文件：260.779 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Epitaxial Planar Silicon Transistor

Features Very small size making it easy to provide highdensity, small-sized hybrid IC’ s.

文件：51.73 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 500mW˄ Tamb=25°C Collector current ICM : -1 A Collector-base voltage VB(BR)CBO : -25 V Operating and storage junction temperature range TJ,Tstg: -55ć to +150ć

文件：140.93 Kbytes 页数：3 Pages

SECOS

喜可士

丝印：DB；Package：SOT-89；Power dissipation, Collector base voltage

文件：845.48 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

LF Amplifier, Electronic Governor Applications

ONSEMI

安森美半导体

NPN Transistors

文件：1.31108 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.31108 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.31108 Mbytes 页数：3 Pages

KEXIN

科信电子

NPN Transistors

文件：1.31108 Mbytes 页数：3 Pages

KEXIN

科信电子