2SD1619

LF Amp,Electronic Governor Applications

LFAmplifier,ElectronicGovernorApplications Features ·Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

2SD1619

NPN Epitaxial Planar Silicon Transistor

Features Verysmallsizemakingiteasytoprovidehighdensity,small-sizedhybridIC’s.

2SD1619

PNP Silicon Medium Power Transistor

FEATURES Powerdissipation PCM:500mW˄Tamb=25°C Collectorcurrent ICM:-1A Collector-basevoltage VB(BR)CBO:-25V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55ćto+150ć

2SD1619

isc Silicon NPN Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=25V(Min) •ComplementtoType2SB1119 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation APPLICATIONS •DesignedforLFAmpElectronicGovernorapplications.

2SD1619

丝印：DB；Package：SOT-89；Power dissipation, Collector base voltage

2SD1619

LF Amplifier, Electronic Governor Applications;

2SD1619_15

NPN Transistors

2SD1619-R

NPN Transistors

2SD1619-S

NPN Transistors

2SD1619-T

NPN Transistors