NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER FEATURES • High gain | S21|2= 12 dB TYP, @f = 1 GHz, VCE= 10 V, Ic = 20 mA • New power mini-mold package version of a 4-pin type gain-improved on the 2SC3357

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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC3357

文件：180.36 Kbytes 页数：10 Pages

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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE85634 / 2SC3357

文件：1.035339 Mbytes 页数：7 Pages

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NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: |S21e|2 = 12 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC3357

文件：180.36 Kbytes 页数：10 Pages

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NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

文件：104.95 Kbytes 页数：7 Pages

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NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

文件：877.51 Kbytes 页数：6 Pages

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NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

HIGH FREQUENCY LOW DISTORTION AMPLIFIER DESCRIPTION The 2SC5337 is a high-frequency transistor designed for a low distortion and low noise amplifier on the VHF to UHF band, which is suitable for the CATV, tele-communication, and such. FEATURES • Low distortion IM2 = 59 dB TYP. @VCE = 10 V,

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NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

文件：877.51 Kbytes 页数：6 Pages

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NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

文件：104.95 Kbytes 页数：7 Pages

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NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

文件：877.51 Kbytes 页数：6 Pages

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