NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

文件：104.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN Silicon RF Transistor for High-Frequency

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the NE46134 / 2SC45

文件：104.95 Kbytes 页数：7 Pages

RENESAS

瑞萨

NPN Silicon RF Transistor for High-Frequency Low Distortion Amplifier 4-Pin Power Minimold

FEATURES • Low distortion: IM2 = 59.0 dB TYP., IM3 = 82.0 dB TYP. @ VCE = 10 V, IC = 50 mA • Low noise NF = 1.5 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 500 MHz NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz • 4-pin power minimold package with improved gain from the 2SC4536

文件：877.51 Kbytes 页数：6 Pages

CEL

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power

文件：186.52 Kbytes 页数：10 Pages

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瑞萨

NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER

DESCRIPTION The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply voltage (VCE= 5 V). This low distortion characteristics is suitable for the CATV, tele-communication, and such. FEATURES • High gain |S21 |2 = 10 dB TYP., @VCE= 5 V, I

文件：71.27 Kbytes 页数：10 Pages

NEC

瑞萨

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 4-PIN POWER MINIMOLD FEATURES • High gain: S21e2 = 10 dB TYP. @ VCE = 5 V, IC = 50 mA, f = 1 GHz • Low distortion, low voltage: IM2 = −55 dB TYP., IM3 = −76 dB TYP. @ VCE = 5 V, IC = 50 mA, Vin = 105 dBµV/75Ω • 4-pin power

文件：186.52 Kbytes 页数：10 Pages

RENESAS

瑞萨

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching applications

文件：172.69 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High speed ·High voltage ·Low saturation voltage ·Bult-in damper type APPLICATIONS ·Horizontal deflection output for medium resolution display,colorTV ·High speed switching applications

文件：83.68 Kbytes 页数：3 Pages

JMNIC

锦美电子

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3P(H)IS package ·High voltage ,high speed ·Low saturation voltage ·Bult-in damper diode APPLICATIONS ·Horizontal deflection output for medium resolution display,color TV ·High speed switching applications

文件：285.47 Kbytes 页数：4 Pages

SAVANTIC

NPN TRIPLE DIFFUSED MESA TYPE (HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV. HIGH SPEED SWITCHING APPLICATIONS)

HORIZONTAL DEFLECTION OUTPUT FOR MEDIUM RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO= 1500 V Low Saturation Voltage : VCE (sat)= 5 V (Max.) High Speed : tf= 0.2 µs (Typ.) Bult−in Damper Type Collector Metal (Fin) is Fully Covered

文件：230.58 Kbytes 页数：5 Pages

TOSHIBA

东芝