NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE SWITCHING APPLICATIONS)

High Voltage Switching Applications • High breakdown voltage : VCEO = 400 V • Low collector-emitter saturation voltage : VCE (sat) = 0.4 V (typ.) (IC = 20 mA, IB = 0.5 mA)

文件：132.83 Kbytes 页数：2 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

NPN Epitaxial Planar Silicon Transistors

Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products.

文件：42.68 Kbytes 页数：2 Pages

KEXIN

科信电子

DC/DC Converter Applications

DC/DC Converter Applications Features • Adoption of FBET, MBIT processes. • Large current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • Ultrasmall package facilitates miniaturization in end products.

文件：44.58 Kbytes 页数：4 Pages

SANYO

三洋

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT=16 GHz series) ● Low Noise Figure : NF = 1.3 dB (f = 2 GHz) ● High Gain : Ga = 9 dB (f = 2 GHz)

文件：99.74 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT=16GHz series) ● Low Noixe Figure : NF = 1.3 dB (f = 2 GHz) ● High Gain : Ga = 9 dB (f = 2 GHz)

文件：99.36 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP: fT = 16 GHz series) • Low Noise Figure : NF=1.3dB (f=2GHz) • High Gain : Ga=9dB (f=2GHz)

文件：98.86 Kbytes 页数：2 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF-UHF Band Low Noise Amplifier Applications (chip: fT = 16 GHz series) • Low Noise Figure :NF = 1.3dB (f = 2GHz) • High Gain:|S21e|2 = 9dB (f = 2GHz)

文件：83.42 Kbytes 页数：1 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF VAND LOW NOISE AMPLIFIER APPLICATIONS (CHIP : fT = 16GHz series) • Low Noise Figure : NF = 1.3 dB (f = 2 GHz) • High Gain : Ga = 11.5 dB (f = 2 GHz)

文件：92.11 Kbytes 页数：1 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.3dB (f = 2 GHz) • High gain: ⎪S21e⎪2 = 11.5dB (f = 2 GHz)

文件：216.3 Kbytes 页数：4 Pages

TOSHIBA

东芝