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2SC5300

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications??????????

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件:84.6 Kbytes 页数:3 Pages

SANYO

三洋

2SC5301

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications??????????

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features • High speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件:84.17 Kbytes 页数:3 Pages

SANYO

三洋

2SC5302

Ultrahigh-Definition Color Display Horizontal Deflection Output Applications??????????

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • Fast speed (tf=100ns typ). • High breakdown voltage (VCBO=1500V). • High reliability (adoption of HVP process). • Adoption of MBIT process.

文件:85.53 Kbytes 页数:3 Pages

SANYO

三洋

2SC5303

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications

Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features · High speed (tf =100ns typ). · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process). · Adoption of MBIT process.

文件:40.87 Kbytes 页数:4 Pages

SANYO

三洋

2SC5304LS

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage (VCBO=1000V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件:43.75 Kbytes 页数:4 Pages

SANYO

三洋

2SC5305

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage (VCBO=1200V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件:42.4 Kbytes 页数:4 Pages

SANYO

三洋

2SC5305

HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR

HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High hFE for Low base drive requirement * Suitable for half bridge light ballast Applications * Built-in Free-wheeling Diode makes it specially suitable for light ballast Applications * Well controlled storage-time spread for all r

文件:159.65 Kbytes 页数:4 Pages

UTC

友顺

2SC5305

isc Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage :V(BR)CBO=120V(Min) • High SpeedSwitching APPLICATIONS • Designed for inverter lighting applications.

文件:95.11 Kbytes 页数:2 Pages

ISC

无锡固电

2SC5305

Silicon NPN Power Transistor

DESCRIPTION • High Breakdown Voltage :V(BR)CBO=120V(Min) • High SpeedSwitching APPLICATIONS • Designed for inverter lighting applications.

文件:123.3 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2SC5305LS

Inverter Lighting Applications

Inverter Lighting Applications Features • High breakdown voltage (VCBO=1200V). • High reliability (Adoption of HVP process). • Adoption of MBIT process.

文件:42.4 Kbytes 页数:4 Pages

SANYO

三洋

晶体管资料

  • 型号:

    2SC5336

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    表面帖装型 (SMD)_超高频/特高频 (UHF)_CATV

  • 封装形式:

    直插封装

  • 极限工作电压:

    20V

  • 最大电流允许值:

    0.1A

  • 最大工作频率:

    6.5GHZ

  • 引脚数:

    3

  • 可代换的型号:

  • 最大耗散功率:

  • 放大倍数:

  • 图片代号:

    H-100

  • vtest:

    20

  • htest:

    6500000000

  • atest:

    0.1

  • wtest:

    0

详细参数

  • 型号:

    2SC53

  • 制造商:

    RENESAS

  • 制造商全称:

    Renesas Technology Corp

  • 功能描述:

    NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
25+
SOT-89
20300
RENESAS/瑞萨原装特价2SC5336即刻询购立享优惠#长期有货
询价
RENESAS/瑞萨
20+
SOT-89
120000
原装正品 可含税交易
询价
NEC
24+
SOT-89
6218
新进库存/原装
询价
NEC
25+
SOT89
2987
只售原装自家现货!诚信经营!欢迎来电
询价
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
NEC
1922+
SOT-89
35689
原装进口现货库存专业工厂研究所配单供货
询价
NEC
18+
SOT89
4000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
NEC
2023+
SOT89
8800
正品渠道现货 终端可提供BOM表配单。
询价
NEC
23+
SOT89
4000
全新原装正品现货,支持订货
询价
NK/南科功率
2025+
SOT-89
986966
国产
询价
更多2SC53供应商 更新时间2026-4-20 11:08:00