MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

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NEC

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MICROWAVE LOW NOISE AMPLIFIER

DESCRIPTION The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The NE68033 / 2SC3585 features excellent power gain with very low-noise figures. The NE68033 / 2SC3585 employs direct nitride passivated

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CEL

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DESCRIPTION The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2SC3585 employs direct nitride passivated base surface process (DNP proc

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MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：103.63 Kbytes 页数：8 Pages

NEC

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NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. F

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NEC

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SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

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NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

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NEC

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NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

文件：238.93 Kbytes 页数：4 Pages

NEC

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SILICON TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

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丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC= 300mA • High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min) • Complement to Type 2SA1400-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

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ISC

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