NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

DESCRIPTION The 2SC3588-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits. FEATURES ● High Voltage VCEO = 400 V ● Complement to 2SA1400-Z

文件：238.93 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN SILICON TRIPLE DIFFUSED TRANSISTOR MP-3

文件：243.46 Kbytes 页数：4 Pages

RENESAS

瑞萨

丝印：DPAK；Package：TO-252；isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector Saturation Voltage VCE(sat)= 0.5V(Max)@ IC= 300mA • High Collector-Emitter Breakdown Voltage V(BR)CEO= 400V(Min) • Complement to Type 2SA1400-Z • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed

文件：285.61 Kbytes 页数：2 Pages

ISC

无锡固电

NPN Silicon Triple Diffused Transistor

Features ● High voltage VCEO=400V

文件：40.64 Kbytes 页数：1 Pages

KEXIN

科信电子

Transistor-Bipolar Power Transistors

Renesas

瑞萨