2SC3587说明书PDF资料市场行情瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC3587	文件：91.01 Kbytes Page：8 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. F 文件：91.01 Kbytes 页数：8 Pages	NEC 瑞萨	NEC
2SC3587	文件：215.11 Kbytes Page：10 Pages	SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran 文件：215.11 Kbytes 页数：10 Pages	RENESAS 瑞萨	RENESAS
2SC3587	文件：300 bytes Page：1 Pages	NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION	Renesas 瑞萨	Renesas
2SC3624	文件：0 bytes Page：0 Pages	SOT23	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SC3624A-T1B	文件：0 bytes Page：0 Pages	SOT23	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS

更多2SC3587供应商更新时间2026-4-18 17:00:00