high-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features • High fT : fT typ=400MHz. • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent HF response : Cre=1.4pF (NPN), 1.7pF (PNP). • Complementary PNP and NPN types. • Adoption of FBET process.

文件：116.99 Kbytes 页数：4 Pages

SANYO

三洋

Ultrahigh-Definition CRT Display Video Output Applications?

Ultrahigh-Definition CRT Display Video Output Applications Features · High fT: fTtyp=400MHz. · High breakdown voltage : VCEO≥200V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=2.0pF (NPN), 2.5pF (PNP). · Complementary PNP and NPN types. · Adoption o

文件：212.47 Kbytes 页数：8 Pages

SANYO

三洋

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

文件：89.68 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

文件：214.51 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range.

文件：222.25 Kbytes 页数：4 Pages

ELEFLOW

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

文件：198.04 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

文件：218.49 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

文件：94.46 Kbytes 页数：8 Pages

NEC

瑞萨

TRANSISTOR

3SK121 datasheet pdf

文件：73.84 Kbytes 页数：1 Pages

TOSHIBA

东芝

NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS)

VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS FEATURES: ● Low Noise Figure, High Gain ● NF = 1.1dB, |S21e|2 = 10dB (f = 1GHz)

文件：294.15 Kbytes 页数：5 Pages

TOSHIBA

东芝