NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

文件：94.46 Kbytes 页数：8 Pages

NEC

瑞萨

SILICON TRANSISTOR

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3604 is an NPN epitaxial transistor designed for lownoise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic ran

文件：218.49 Kbytes 页数：10 Pages

RENESAS

瑞萨

NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

The 2SC3604 is an NPN epitaxial transistor designed for low noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and has a wide dynamic range. FEATURES • Low noise : NF = 1.6 dB TYP. @ f = 2.0 GHz • High power gai

文件：198.04 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司

SOT23

RENESAS

瑞萨

上传：深圳市正纳电子有限公司