NPN TRIPLE DIFFUSED TYPE (COLOR TV HORIZONTAL DRIVER, CHROMA OUTPUT APPLICATIONS)

Color TV Horizontal Driver Applications Color TV Chroma Output Applications • High breakdown voltage: VCEO = 300 V • Recommended for chroma output and driver applications for line-operated TV horizontal.

文件：189.83 Kbytes 页数：3 Pages

TOSHIBA

东芝

NPN EPITAXIAL TYPE (COLOR TV VERT. DEFLECTION,CLASS B SOUND OUTPUT APPLICATIONS)

Color TV Vertitcal Deflection Output Applications Color TV Class-B Sound Output Applications • Large collector current and collector power dissipation capability • Recommended for vertical deflection output and sound output applications for line-operated TVs. • Complementary to 2SA1408.

文件：187.15 Kbytes 页数：3 Pages

TOSHIBA

东芝

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

文件：238.57 Kbytes 页数：8 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

文件：300.67 Kbytes 页数：4 Pages

NEC

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A)

文件：300.67 Kbytes 页数：4 Pages

NEC

瑞萨

NPN SILICON TRANSISTOR

FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

文件：158.8 Kbytes 页数：2 Pages

NEC

瑞萨

2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：229.48 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON TRANSISTORS

NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3623) VEBO: 15 V (2SC3623A)

文件：271.16 Kbytes 页数：6 Pages

RENESAS

瑞萨

2SC3623A

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

文件：229.48 Kbytes 页数：4 Pages

NEC

瑞萨

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS MINI MOLD FEATURES ● High DC Gurrent Gain : hFE = 1000 to 3200 ● Low VCE(sat) : VCE(sat) = 0.07 V TYP. ● High VEBO : VEBO = 15 V (2SC3624A)

文件：222.43 Kbytes 页数：4 Pages

NEC

瑞萨