2SC3622A技术资料参数供应商报价瑞萨NEC-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SC3622A	文件：300.67 Kbytes Page：4 Pages	NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) 文件：300.67 Kbytes 页数：4 Pages	NEC 瑞萨	NEC
2SC3622A	文件：300 bytes Page：1 Pages	Transistor-Bipolar Power Transistors	Renesas 瑞萨	Renesas
2SC3622	文件：238.57 Kbytes Page：8 Pages	SILICON TRANSISTORS NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) 文件：238.57 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SC3622	文件：300.67 Kbytes Page：4 Pages	NPN SILICON EPITAXIAL TRANSISTOR Audio Frequency Amplifier,Switching NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA • High VEBO: VEBO: 12 V (2SC3622) VEBO: 15 V (2SC3622A) 文件：300.67 Kbytes 页数：4 Pages	NEC 瑞萨	NEC

更多2SC3622A供应商更新时间2025-11-30 14:02:00