800MHz band. 24V wideband linear power amplifier For communication industry

Features OHigh efficiency, high output, and linearity at 860MHz. PO=4.8W, Gain=10.8dBTYP. (classA, Vcc=24V, Pi.=0.4W, f=860MHz) ・PC=10.7W, Rc=65%TYP. (classC, Vcc=25V, Pi.=2.5W, f=900MHz) oBuilt-in emitter stabilization resistor. oWide safe operating area. oCan withstand VS

文件：238.74 Kbytes 页数：3 Pages

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isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Breakdown Voltage— : V(BR)CEO = 200 V • Complement to Type 2SA1380 APPLICATIONS • Designed for ultrahigh-definition CRT display, video output applicaitons

文件：107.63 Kbytes 页数：2 Pages

ISC

无锡固电

Ultrahigh-Definition CRT Display, Video Output Applications???

Ultrahigh-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥200V. • Small reverse transfer capacitance and excellent high-frequnecy characteristics : Cre=1.2pF (NPN), 1.7pF (PNP), VCB=30V. • Adoption of FBET process

文件：136.83 Kbytes 页数：4 Pages

SANYO

三洋

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

文件：183.52 Kbytes 页数：3 Pages

SANYO

三洋

Transistors for TV Display Video Output Use

Transistors for TV Display Video Output Use

文件：183.52 Kbytes 页数：3 Pages

SANYO

三洋

High-Definition CRT Display, Video Output

High-Definition CRT Display, Video Output Applications Features • High breakdown voltage : VCEO≥300V. • Small reverse transfer capacitance and excellent high frequency characteristic : Cre=1.8 pF (NPN), 2.3pF (PNP), VCB=30V. • Adoption of MBIT process.

文件：137.04 Kbytes 页数：4 Pages

SANYO

三洋

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

文件：154.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

文件：154.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

文件：154.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体

NPN Epitaxial Silicon Transistor

Features • High Voltage : VCEO= 300V • Low Reverse Transfer Capacitance : Cre= 1.8pF at VCB = 30V • Excellent Gain Linearity for low THD • High Frequency: 150MHz • Full thermal and electrical Spice models are available • Complement to 2SA1381/KSA1381. Applications • Audio, Voltage Amplifie

文件：154.69 Kbytes 页数：6 Pages

FAIRCHILD

仙童半导体