Silicon NPN Epitaxial

Application UHF / VHF wide band amplifier

文件：28.94 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Epitaxial

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

文件：35.36 Kbytes 页数：1 Pages

KEXIN

科信电子

PNP/NPN SILICON EPITAXIAL TRANSISTOR

PNP/NPN Silicon Epitaxial Transistor Audio Frequency Power Amplifier

文件：33.23 Kbytes 页数：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

isc Silicon NPN Power Transistor

DESCRIPTION ·High Collector-Emitter Breakdown Voltage-: V(BR)CEO= 180V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1383 APPLICATIONS ·Adudio frequency power amplifier

文件：251.96 Kbytes 页数：2 Pages

ISC

无锡固电

High Voltage Control Applications

Features • High Voltage: VCBO = 300V , VCEO = 300V • Low Saturation Voltage: VCE(sat) = 0.5V (max) • Small Collector Output Capacitance: Cob = 3pF(typ.) • PC = 1 to 2W (mounted on ceramic substrate) • Small Flat Package • Complementary to 2SA1384

文件：729.2 Kbytes 页数：4 Pages

KEXIN

科信电子

NPN TRIPLE DIFFUSED TYPE (HIGH VOLTAGE CONTROL, PLASMA DISPLAY, NIXIE TUBE DRIVER, CATHODE RAY TUBE BRIGHTNESS CONTROL APPLICATIONS)

HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, VCEO = 300 V • Low saturation voltage: VCE (sat) = 0.5 V (max) • Small collector output capacitance: Cob = 3 pF (typ.)

文件：267.19 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

文件：40.94 Kbytes 页数：1 Pages

KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：236.01 Kbytes 页数：4 Pages

NEC

瑞萨