isc Silicon NPN Power Transistor

DESCRIPTION • Low collector saturation voltage • High DC current gain • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • This transistor is ideal for audio frequency amplifier and switching especially in hybrid i

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ISC

无锡固电

NPN Silicon Epitaxia

Features ● Low VCE(sat). ● Fast switching speed. ● High DC current gain.

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KEXIN

科信电子

NPN SILICON EPITAXIAL TRANSISTOR MP-3

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：236.01 Kbytes 页数：4 Pages

NEC

瑞萨

SILICON POWER TRANSISTOR

DESCRIPTION The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN SILICON EPITAXIAL TRANSISTOR

文件：773 Kbytes 页数：6 Pages

RENESAS

瑞萨

NPN Transistors

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KEXIN

科信电子

Bipolar Power Transistors

Support is limited to customers who have already adopted these products.\n\nThe 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. • High DC Current Gain hFE = 100 to 400\n• Low VCE(sat): VCE(sat) = 0.09 V TYP.\n• Complement to 2SA1385-Z;

Renesas

瑞萨