首页 >2SC1623-D-TZ>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONEPITAXIALTRANSISTORMINIMOLD FEATURES •HighDCCurrentGain:hFE=200TYP. (VCE=6.0V,IC=1.0mA) •HighVoltage:VCEO=50V | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPNGeneralPurposeTransistors Lead(Pb)-Free | WEITRONWEITRON 威堂電子科技 | WEITRON | ||
NPNSiliconEpitaxialTransistors Features •HalogenFree.“Green”Device(Note1) •MoistureSensitivityLevel1 •EpoxyMeetsUL94V-0FlammabilityRating •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS Compliant.SeeOrderingInformation) | MCCMicro Commercial Components 美微科美微科半导体公司 | MCC | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | TEL TRANSYS Electronics Limited | TEL | ||
NPNSiliconTransistor Features ●HighDCCurrentGain: hFE=200TYP. VCE=6.0V,IC=1.0mA ●HighVoltage: VCEO=50V | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
NPNEpitaxialPlanarTransistor DESCRIPTION The2SC1623isdesignedforusedriverstageofAFamplifierandgeneralpurposeapplication. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | ||
TECHNICALSPECIFICATIONSOFNPNEPITAXIALPLANARTRANSISTOR Description Designedforaudiofrequencyamplifierapplications. | DCCOMDc Components 直流元件直流元件有限公司 | DCCOM | ||
Plastic-EncapsulateTransistors | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 赛尔斯深圳市赛尔斯科技有限公司 | SHENZHENSLS | ||
SiliconNPNtransistorinaSOT-23PlasticPackage Descriptions SiliconNPNtransistorinaSOT-23PlasticPackage. Features HighhFEandVCEO,complementarypairwith2SA812. Applications Audiofrequencygeneralamplifierapplication. | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
SiliconEpitaxialPlanarTransistor | BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司 | BILIN | ||
SiliconPNPEpitaxialTypeTransistor | BWTECHBruckewell Technology LTD 布吕克韦尔技术布吕克韦尔技术有限公司 | BWTECH | ||
AUDIOFREQUENCYGENERALPURPOSEAMPLIFIERNPNSILICONTRANSISTORMINIMOLD DESCRIPTION TheUTC2SC1623isaNPNsilicontransistorusingUTC’sadvancedtechnologytoprovidecustomerswithhighDCcurrentgainandhighbreakdownvoltage.TheUTC2SC1623isusuallyusedinaudiofrequencygeneralpurposeamplifier. FEATURES *HighbreakdownVoltage *HighDCCurrentGai | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ●HighVoltage:VCEO=50V. APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor. ●Audiofrequencygeneralpurposeamplifier. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | LUGUANG | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA ●Highvoltage:VCEO=50V | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | ||
Plastic-EncapsulateTransistors FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | HOTTECHGuangdong Hottech Co. Ltd. 合科泰广东合科泰实业有限公司 | HOTTECH | ||
HighDCcurrentgainhFE200(Typ)VCE6V,IC1mA FEATURES HighDCcurrentgain:hFE=200(Typ)VCE=6V,IC=1mA Highvoltage:VCEO=50V | MAKOSEMI MAKO SEMICONDUCTOR CO.,LIMITED | MAKOSEMI | ||
TRANSISTOR(NPN) FEATURES Powerdissipation PCM:200mW(Tamb=25℃) Collectorcurrent ICM:100mA Collector-basevoltage V(BR)CBO:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | WINNERJOIN | ||
SiliconEpitaxialPlanarTransistor FEATURES ●HighDCcurrentgain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ●HighVoltage:VCEO=50V APPLICATIONS ●NPNSiliconEpitaxialPlanarTransistor ●Audiofrequencygeneralpurposeamplifier. | SKTECHNOLGYSHIKE Electronics 時科广东時科微实业有限公司 | SKTECHNOLGY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
2008++ |
SOT-23 |
6200 |
新进库存/原装 |
询价 | ||
NEC |
16+ |
SOT23 |
3000 |
原装现货假一罚十 |
询价 | ||
NEC-日本电气 |
24+25+/26+27+ |
SOT-23.贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
银河微电子 |
2112+ |
SOT-23 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
询价 | ||
银河微电子 |
23+ |
SOT23 |
6000 |
诚信服务，绝对原装原盘 |
询价 | ||
23+ |
N/A |
78500 |
一级代理放心采购 |
询价 | |||
进口原装 |
23+ |
进口原装 |
3000 |
全新原装热卖/假一罚十!更多数量可订货 |
询价 | ||
蓝箭 |
24+ |
SOT-23 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
17ROHS |
3002 |
原装正品--可开增值税发票量大可订货 |
询价 | |||
原装 |
20+ |
原装 |
56200 |
原装优势主营型号-可开原型号增税票 |
询价 |
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