Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)

Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications • High breakdown voltage, high current capability : VCEO = 50 V (min), IC = 150 mA (max) • Excellent linearity of hFE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA)

文件：212.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in driver stage of AF amplifier general purpose amplification.

文件：215.02 Kbytes 页数：1 Pages

DCCOM

道全

NPN SILICON TRANSISTOR

文件：168.25 Kbytes 页数：2 Pages

MICRO-ELECTRONICS

NPN Type Plastic Encapsulate Transistors

FEATURES • Power Dissipation PCM: 0.4 W ( Ta = 25 °C ) • Collector Current ICM: 0.15 A • Collector-Base Voltage V(BR)CBO: 60 V

文件：188.02 Kbytes 页数：2 Pages

SECOS

喜可士

isc Silicon NPN Transistor

文件：235.34 Kbytes 页数：2 Pages

ISC

无锡固电

AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR

文件：215.31 Kbytes 页数：4 Pages

UTC

友顺