丝印：T106；Package：UMT3；Medium Power Transistor (32V, 0.5A)

Medium Power Transistor (32V, 0.8A) Features 1) Very Low VCE(sat). VCE(sat)= 0.1V(Typ.) ̈́IC/ IB= 500УA / 50mAͅ 2) High current capacity in compact package. 3) Complements the 2SB1197K.

文件：74.94 Kbytes 页数：4 Pages

ROHM

罗姆

TRANSISTOR (NPN)

FEATURES ● High ICMax. ICMax=0.5A ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1577

文件：1.19965 Mbytes 页数：1 Pages

HTSEMI

金誉半导体

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High ICMax. =0.5A ● Low VCE(sat).Optimal for low voltage operation. ● Complements the 2SA1577

文件：1.44541 Mbytes 页数：4 Pages

JIANGSU

长电科技

Medium Power Transistor

Features ● High ICMax. ICMax. = 0.5A ● Low VCE(sat). Optimal for low voltage operation.

文件：83.39 Kbytes 页数：2 Pages

KEXIN

科信电子

Medium Power Transistor

FEATURES • High ICMax. ICMax=0.5A. • Low VCE(sat). Optimal for low voltage operation. • Complementary to 2SA1577

文件：105.68 Kbytes 页数：3 Pages

SECOS

喜可士

Silicon Epitaxial Planar Transistor

FEATURES ● Excellent hFE linearity. ● Power dissipation:PCM=200mW APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor.

文件：153.23 Kbytes 页数：3 Pages

BILIN

银河微电

SOT-323 Plastic-Encapsulate Transistors

FEATURES High ICMax. =0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577

文件：1.8929 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR(NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 500 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：129.919 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon NPN transistor in a SOT-323 Plastic Package

Descriptions Silicon NPN transistor in a SOT-323 Plastic Package. Features Low Cob, complements the 2SA1577. Applications Medium power transistor.

文件：756.45 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

NPN Plastic-Encapsulate Transistor

文件：993.93 Kbytes 页数：2 Pages

SECOS

喜可士