2N7002DW-HF

MOSFET

Features -Voltagecontrolledsmallsignalswitch. -Lowinputcapacitance. -Fastswitchingspeed. -Lowinput/outputleakage.

2N7002DWK

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicati

2N7002DWKX

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage ESDProtectedupto2kV TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(No

2N7002DWL

DualN-ChannelMOSFET

Features •HighDensityCellDesignForLowRDS(ON) •VoltageControlledSmallSignalSwitch •EpoxyMeetsUL94V-0FlammabilityRating •MoistureSensitivityLevel1 •HalogenFreeAvailableUponRequestByAddingSuffix-HF •LeadFreeFinish/RoHSCompliant(PSuffixDesignatesRoHS C

2N7002DWQ

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features DualN-ChannelMOSFET LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage Ultra-SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) The

2N7002DWS

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features LowOn-Resistance LowInputCapacitance FastSwitchingSpeed LowInput/OutputLeakage ESDProtected TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Forautomotiveapplicationsrequiringspecificchangecontrol Applicatio

2N7002DW-TP

N-ChannelMOSFET

Features •Halogenfreeavailableuponrequestbyaddingsuffix-HF •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •HighdensitycelldesignforlowRDS(ON) •Ruggedandreliable •Voltagecontrolledsmallsignalswitch •OperatingJunctionTemperature:-55to+

2N7002E

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:3 •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:7.5ns •LowInputandOutputLeakage •ComplianttoRoHSDirective2002/95/EC BENEFITS •LowOffsetVoltage •Low-Vo

2N7002E

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Description ThisMOSFEThasbeendesignedtominimizetheon-stateresistance(RDS(ON))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. FeaturesandBenefits •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapaci

2N7002E

N-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology. Features ■Logiclevelthresholdcompatible ■Surface-mountedpackage ■Veryfastswitching ■TrenchMOStechnology Applications ■Logicleveltranslator ■High-sp