DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

文件：513.419 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：MM1；Package：SOT363；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) For automotive applications requiring specific change control Applicatio

文件：513.419 Kbytes 页数：7 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•Fast Switching Speed\n•Low Input/Output Leakage;

Diodes

美台半导体

N-Channel MOSFET

Features • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • High density cell design for low RDS(ON) • Rugged and reliable • Voltage controlled small signal switch • Operating Junction Temperature: -55 to +

文件：102.89 Kbytes 页数：2 Pages

MCC

N-channel TrenchMOS FET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. Features ■ Logic level threshold compatible ■ Surface-mounted package ■ Very fast switching ■ TrenchMOS technology Applications ■ Logic level translator ■ High-sp

文件：81.36 Kbytes 页数：11 Pages

PHI

飞利浦

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capaci

文件：419.09 Kbytes 页数：4 Pages

DIODES

美台半导体