丝印：2N4；Package：SOT-26；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Low Gate Charge • Low RDS(ON): ▪ 24mΩ @ VGS = 4.5V ▪ 28mΩ @ VGS = 2.5V ▪ 34mΩ @ VGS = 1.8V • Low Input/Output Leakage • ESD Protected up to 2kV HBM • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) •

文件：151.64 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：2N4；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：2N4；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：2N4；Package：SOT-26；DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件：257.16 Kbytes 页数：6 Pages

DIODES

美台半导体

丝印：2N4400；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

文件：1.40857 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2N4400；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Amplifier Transistor

文件：1.40857 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2N4401；Package：TO-923L；NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

文件：661.16 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：2N4401；Package：TO-923L；NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

文件：661.16 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：2N4401；Package：TO-923L；NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

文件：661.16 Kbytes 页数：10 Pages

ONSEMI

安森美半导体

丝印：2N4401；Package：TO-923L；NPN General-Purpose Amplifier

Description This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA.

文件：661.16 Kbytes 页数：10 Pages

ONSEMI

安森美半导体