丝印：2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：2N6517；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Complement to 2N6520

文件：1.38427 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：76.42 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● Complement to 2N6520

文件：402.35 Kbytes 页数：3 Pages

JIANGSU

长电科技

Plastic-Encapsulated Transistors

FEATURES Power dissipation PCM : 625 mW (Tamb=25℃) Collector current ICM : 500 mA Collector-base voltage V(BR)CBO : 350 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.129 Kbytes 页数：1 Pages

TEL

东电电子

TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR

Description Designed for applications requiring high breakdown voltage.

文件：213.35 Kbytes 页数：1 Pages

DCCOM

道全

NPN Plastic Encapsulated Transistor

FEATURES  High Voltage Transistors  Complement of the 2N6520

文件：142.04 Kbytes 页数：1 Pages

SECOS

喜可士

NPN EPITAXIAL PLANAR TRANSISTOR

Description The 2N6517 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. • Low Collector-Emitter Saturation Voltage. • The 2N6517 is complementary to 2N6520.

文件：58.3 Kbytes 页数：3 Pages

TGS