744760027A

Marking：2N7；WE-KI SMT Wire Wound Ceramic Inductor

GeneralInformation: Itisrecommendedthatthetemperatureofthecomponentdoesnotexceed+125°Cunderworst caseconditions AmbientTemperature(referring toIR)-40upto+110°C OperatingTemperature-40upto+125°C StorageConditions(inoriginal packaging)

TCR2EE27

Marking：2N7；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TCR2EF27

Marking：2N7；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

TheTCR2EFandTCR2EEseriesareCMOSsingleoutputvoltage regulatorswithanon/offcontrolinput,featuringlowdropoutvoltage,low outputnoisevoltageandfastloadtransientresponse. Thesevoltageregulatorsareavailableinfixedoutputvoltagesbetween1.0 Vand5.0Vandcapableof

TCR5BM27A

Marking：2N7；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1.Description TheTCR5BMseriesareCMOSsingle-outputvoltageregulatorswithanon/offcontrolinput,featuringultralowdropoutvoltage,highPSRR,lowinrushcurrentandfastloadtransientresponse. Adifferentiatingfeatureistheuseofasecondarybiasrailasareferencevoltagethat

2N7000

Marking：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2N7000

Marking：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATIONS ●Loadswitchforportabledevices ●DC/DCconverter

2N7000-D26Z

Marking：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2N7000-D74Z

Marking：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2N7000-D75Z

Marking：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description TheseN−channelenhancementmodefieldeffecttransistorsare producedusingonsemi’sproprietary,highcelldensity,DMOS technology.Theseproductshavebeendesignedtominimizeon−state resistancewhileprovidingrugged,reliable,andfastswitching performance.Theseproducts

2EDN7523F

Marking：2N7523AF；Package：PG-DSO-8-60；EiceDRIVER?