丝印：2N7；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.93 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：2N7；Package：ESV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：2N7；Package：SMV；200 mA CMOS Low Dropout Regulator with Fast Load Transient Response

The TCR2EF and TCR2EE series are CMOS single output voltage regulators with an on/off control input, featuring low dropout voltage, low output noise voltage and fast load transient response. These voltage regulators are available in fixed output voltages between 1.0 V and 5.0 V and capable of

文件：1.52347 Mbytes 页数：17 Pages

TOSHIBA

东芝

丝印：2N7；Package：DFN5B；500 mA CMOS Ultra Low Dropout Regulator

1. Description The TCR5BM series are CMOS single-output voltage regulators with an on/off control input, featuring ultra low dropout voltage, high PSRR, low inrush current and fast load transient response. A differentiating feature is the use of a secondary bias rail as a reference voltage that

文件：1.36844 Mbytes 页数：16 Pages

TOSHIBA

东芝

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000021；Package：TO-92；N-Channel Enhancement Mode Power MOSFET

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATIONS ● Load switch for portable devices ● DC/DC converter

文件：150.26 Kbytes 页数：2 Pages

SECELECTRONICS

上优电子

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7000；Package：TO-92；N-Channel Enhancement Mode Field Effect Transistor

Description These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while providing rugged, reliable, and fast switching performance. These products

文件：372.34 Kbytes 页数：13 Pages

ONSEMI

安森美半导体

丝印：2N7523AF；Package：PG-DSO-8-60；EiceDRIVER?

文件：1.18057 Mbytes 页数：31 Pages

Infineon

英飞凌