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IXFP16N50P

PowerMOSFET

IXYS

IXYS Integrated Circuits Division

IXTA16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTA16N50P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTP16N50P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Integrated Circuits Division

IXTP16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP16N50PM

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTP16N50PM

N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode

IXYS

IXYS Integrated Circuits Division

IXTQ16N50P

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

IXTQ16N50P

PolarHVTMPowerMOSFETN-ChannelEnhancementModeAvalancheRated

VDSS=500V ID25=16A RDS(on)≤400mΩ Features UnclampedInductiveSwitching(UIS)rated Internationalstandardpackages Lowpackageinductance -easytodriveandtoprotect Advantages Easytomount Spacesavings Highpowerdensity

IXYS

IXYS Integrated Circuits Division

KF16N50F

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS(Min.)=500V,ID=17A •Drain-SourceONRes

KECKEC CORPORATION

KEC株式会社

KF16N50P

NCHANNELMOSFIELDEFFECTTRANSISTOR

GeneralDescription ThisplanarstripeMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforswitchingmodepowersupplies. FEATURES •VDSS(Min.)=500V,ID=17A •Drain-SourceONRes

KECKEC CORPORATION

KEC株式会社

MDF16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDF16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDP16N50G

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50GTH

N-ChannelMOSFET500V,16.0A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDP16N50GTH

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=16A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.35Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MDQ16N50G

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTH

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

MDQ16N50GTP

N-ChannelMOSFET500V,16.5A,0.35(ohm)

MGCHIP

MagnaChip Semiconductor.

供应商型号品牌批号封装库存备注价格
09
22+
TO-220F
2115
原装现货假一赔十
询价
9
23+
TO-220F
6000
专注配单,只做原装进口现货
询价
9
23+
TO-220F
6000
专注配单,只做原装进口现货
询价
FUJ/富士
TO-220F
608900
原包原标签100%进口原装常备现货!
询价
FUJI/富士电机
24+
TO2203P
58000
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
N/A
2021+
TO220F
28888
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
UTC
23/22+
TO263
6000
20年老代理.原厂技术支持
询价
VB
2019
TO-220CFM
55000
绝对原装正品假一罚十!
询价
VBSEMI
19+
TO-220CFM
29600
绝对原装现货,价格优势!
询价
UTC/友顺
2021+
TO220F2
100000
原装现货
询价
更多16N50ES供应商 更新时间2024-6-8 15:23:00